Matthiessen’s rule inMgB2: Resistivity andTcas a function of point defect concentration
نویسندگان
چکیده
منابع مشابه
Contribution of a point defect to the electrical resistivity of simple and non-simple metals
Recently proposed potential has been used to calculate the contribution of a point defect to the electrical resistivity of simple and non-simple metals including d and f-shell metals. The parameter of the potential has been determined using zero pressure condition while the exchange and correlation effect due to Taylor is incorporated. Our present findings for Al, Pb, Cu, Ag and Au are excellen...
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15 صفحه اولA fourfold coordinated point defect in silicon.
Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2007
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.76.132504